Stress controlled ferroelectric (Ba0.5Sr0.5)TiO3 thin films prepared on Gd2O3/SrTiO3(001) by a pulsed laser deposition

被引：0
作者：
Chung, Jun-Ki [1 ]
Kim, Sang Su
Bae, Dong Sik
Kim, Myung-Ho
Song, The Kwon
Moon, Seung Eon
Lee, Su-Jae
Kwak, Min-Hwan
Kang, Kwang Yong
Kim, Won-Jeong
机构：
[1] Changwon Natl Univ, Chang Won, South Korea
[2] Elect & Telecommun Res Inst, Taejon 305606, South Korea
来源：
INTEGRATED FERROELECTRICS | 2006年 / 80卷
基金：
新加坡国家研究基金会;
关键词：
(Ba; Sr)TiO3 thin film; tunable microwave device; thin film structure;
D O I：
10.1080/10584580600663169
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Stress controlled epitaxial ferroelectric Ba0.5Sr0.5TiO3 (BST) films have been deposited on Gd2O3/SrTiO3 by pulsed laser deposition with oxygen background pressure of 200 mTorr at the deposition temperature of 750 degrees C. In order to control the stress in BST films, oxygen pressures for Gd2O3 buffer layers have been varied from 0.1 to 100 mTorr, while that of BST films have been fixed at 200 mTorr. It has been found that the lattice parameters of the BST films deposited on Gd2O3 were changed. Furthermore, microwave properties of co-planar waveguide (CPW) fabricated on BST films were investigated by a HP 8510C vector network analyzer from 1-20 GHz. Large dielectric tunabilities were observed from the CPW's fabricated on BST films deposited on Gd2O3 layers deposited at low and high oxygen pressures, 0.1 and 100 mTorr, respectively.
引用
收藏
页码：415 / 421
页数：7
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