Wide Dynamic Range CMOS Amplifier Design for RF Signal Power Detection via Electro-Thermal Coupling

被引:6
作者
Feng, Junpeng [1 ]
Onabajo, Marvin [1 ]
机构
[1] Northeastern Univ, Dept Elect & Comp Engn, Dana Res Ctr 409, Boston, MA 02115 USA
来源
JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS | 2014年 / 30卷 / 01期
关键词
On-chip temperature sensor; Built-in testing; Differential temperature sensing; Thermal monitoring; Class AB amplifier; LOW-NOISE AMPLIFIERS; SENSORS;
D O I
10.1007/s10836-013-5427-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A differential temperature sensor for on-chip signal and DC power monitoring is presented for built-in testing and calibration applications. The amplifiers in the sensor are designed with class AB output stages to extend the dynamic range of the temperature/power measurements. Two high-gain amplification stages are used to achieve high sensitivity to temperature differences at points close to devices under test. Designed in 0.18 mu m CMOS technology, the sensor has a simulated sensitivity that is tunable up to 210 mV/A degrees C with a corresponding dynamic range of 13 A degrees C. The sensor consumes 2.23 mW from a 1.8 V supply. A low-power version of the sensor was designed that consumes 1.125 mW from a 1.8 V supply, which has a peak sensitivity of 185.7 mV/A degrees C over a 8 A degrees C dynamic range.
引用
收藏
页码:101 / 109
页数:9
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