Extended short wavelength infrared heterojunction phototransistors based on type II superlattices

被引：22

作者：

Dehzangi, Arash ^{[1
]}

McClintock, Ryan ^{[1
]}

Wu, Donghai ^{[1
]}

Haddadi, Abbas ^{[1
]}

Chevallier, Romain ^{[1
]}

Razeghi, Manijeh ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 19期

关键词：

PHOTODIODES; GAIN;

D O I：

10.1063/1.5093560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A two terminal extended short wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb on a GaSb substrate is designed, fabricated, and investigated. With the base thickness of 40nm, the device exhibited a 100% cut-off wavelength of approximate to 2.3m at 300K. The saturated peak responsivity value is 320.5A/W at 300K, under front-side illumination without any antireflection coating. A saturated optical gain of 245 at 300K was measured. At the same temperature, the device exhibited a collector dark current density (at unity optical gain) and a DC current gain of 7.8x10(-3) A/cm(2) and 1100, respectively. The device exhibited a saturated dark current shot noise limited specific detectivity of 4.9x10(11)cmHz(1/2)/W at 300K which remains constant over a broad range of wavelengths and applied biases.

引用

页数：5

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