Detection of H2S gas at lower operating temperature using sprayed nanostructured In2O3 thin films

被引：23

作者：

Bari, Ramesh H. ^{[1
]}

Patil, Parag P. ^{[1
]}

Patil, Sharad B. ^{[1
]}

Bari, Anil R. ^{[2
]}

机构：

[1] GDM Arts KRN Commerce & MD Sci Coll, Dept Phys, Jamner 424206, India

[2] Arts Commerce & Sci Coll, Dept Phys, Bodwad 425310, India

来源：

BULLETIN OF MATERIALS SCIENCE | 2013年 / 36卷 / 06期

关键词：

Nanostructured In2O3; thin films; spray pyrolysis; H2S gas sensor; low temperature;

D O I：

10.1007/s12034-013-0572-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanostructured indium oxide (In2O3) thin films were prepared by spray pyrolysis (SP) technique. X-ray diffraction (XRD) was used to investigate the structural properties and field emission scanning electron microscopy (FESEM) was used to confirm surface morphology of In2O3 films. Measurement of electrical conductivity and gas sensing performance were conducted using static gas sensing system. Gas sensing performance was studied at different operating temperature in the range of 25-150 A degrees C for the gas concentration of 500 ppm. The maximum sensitivity (S = 79%) to H (2) S was found at lower temperature of 50 A degrees C. The quick response (4 s) and fast recovery (8 s) are the main features of this film.

引用

页码：967 / 972

页数：6

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