Low-damage high-throughput grazing-angle sputter deposition on graphene

被引:18
作者
Chen, C. -T. [1 ]
Casu, E. A. [1 ,2 ]
Gajek, M. [1 ]
Raoux, S. [1 ]
机构
[1] IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] Politecn Torino, I-10129 Turin, Italy
关键词
SURFACES; SPECTRA; ATOMS;
D O I
10.1063/1.4813911
中图分类号
O59 [应用物理学];
学科分类号
摘要
Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications. (C) 2013 AIP Publishing LLC.
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页数:5
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