Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides

被引：271

作者：

Carvalho, A. ^{[1
]}

Ribeiro, R. M. ^{[1
,2
,3
]}

Castro Neto, A. H. ^{[1
]}

机构：

[1] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore

[2] Univ Minho, Ctr Phys, P-4710057 Braga, Portugal

[3] Univ Minho, Dept Phys, P-4710057 Braga, Portugal

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.88.115205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the optical conductivity of two-dimensional (2D) semiconducting transition metal dichalcogenides using ab initio density functional theory. We find that this class of materials presents large optical response due to the phenomenon of band nesting. The tendency towards band nesting is enhanced by the presence of van Hove singularities in the band structure of these materials. Given that 2D crystals are atomically thin and naturally transparent, our results show that it is possible to have strong photon-electron interactions even in 2D.

引用

页数：6

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