Asymmetric structure-induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor

被引：18

作者：

Tsai, Ming-Yen ^{[1
]}

Chang, Ting-Chang ^{[2
,3
]}

Chu, Ann-Kuo ^{[1
]}

Chen, Te-Chih ^{[2
]}

Hsieh, Tien-Yu ^{[2
]}

Lin, Kun-Yao ^{[2
]}

Tsai, Wu-Wei ^{[4
]}

Chiang, Wen-Jen ^{[4
]}

Yan, Jing-Yi ^{[4
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[4] Ind Technol Res Inst, Hsinchu 31040, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 14期

关键词：

D O I：

10.1063/1.4824329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter investigates the degradation behavior under hot-carrier stress in InGaZnO thin film transistors with I- and U-shaped asymmetric electrodes. After hot-carrier stress, a serious V-t shift, as well as on-current and subthreshold swing degradations are observed in I-d-V-g transfer curve under reverse mode. Moreover, it is found that the V-t instability is caused by hot-electron injection near the drain side, and this phenomenon which is verified by C-V measurement. Furthermore, the location of trapped hot-electron is estimated from the two-stage rise in the gate-to-drain/gate-to-source capacitance curves and then verified by the simulation tool. (C) 2013 AIP Publishing LLC.

引用

页数：4

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