Fabrication and Characterization of InAs/GaSb type-II Superlattice Long-Wavelength Infrared Detectors Aiming High Temperature Sensitivity

被引：9

作者：

Wang, Liang ^{[1
,2
]}

Xu, Zhicheng ^{[1
]}

Xu, Jiajia ^{[1
]}

Dong, Feng ^{[1
]}

Wang, Fangfang ^{[1
]}

Bai, Zhizhong ^{[1
]}

Zhou, Yi ^{[1
]}

Chai, Xuliang ^{[1
,2
]}

Li, Hui ^{[1
]}

Ding, Ruijun ^{[1
]}

Chen, Jianxin ^{[1
]}

He, Li ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detector, Shanghai 200083, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2020年 / 38卷 / 21期

基金：

中国国家自然科学基金;

关键词：

Detectors; Dark current; Current measurement; Temperature measurement; Temperature; Photodetectors; Fabrication; Focal plane array; long-wavelength infrared; NETD; photodetectors; type-II superlattice;

D O I：

10.1109/JLT.2020.3005974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Noise equivalent temperature difference (NETD) is an important figure of merit for infrared detectors. Lower NETD means that the detector can realize smaller temperature resolution and longer range recognition. In this work, we investigate the device performance, especially the NETD characteristics of a long-wavelength infrared (LWIR) photodetector based on InAs/GaSb type-II superlattice (T2SL). To achieve mK-level temperature-sensitivity, the effect of detector's intrinsic and extrinsic factors on NETD performance has been discussed. Through a series of efforts, a NETD value of 7 mK was realized for a T2SL detector with a 100% cutoff wavelength of 11.4 mu m at 77 K.

引用

页码：6129 / 6134

页数：6

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