Relaxor behavior of BaBi4Ti3Fe0.5Nb0.5O15 ceramics

被引:18
作者
Kumar, Sunil [1 ]
Varma, K. B. R. [1 ]
机构
[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
关键词
ferroelectrics; ceramics; dielectric response;
D O I
10.1016/j.ssc.2008.07.008
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Monophasic BaBi4Ti3Fe0.5Nb0.5O15 (BBTFN) which exhibited relaxor ferroelectric properties has been synthesized via the solid-state reaction route. X-ray powder diffraction (XRD) studies carried out at room temperature confirmed the phase to be an n = 4 member of the Aurivillius family of oxides. The XRD pattern was indexed to an orthorhombic cell associated with lattice parameters a = 5.463(3) angstrom, b = 5.443(3) angstrom and c = 41.77(2) angstrom. A broad dielectric peak associated with the frequency dependent dielectric maximum temperature was observed. The high temperature slope of the dielectric peak was characterized by the Lorenz-type quadratic law for relaxors. The dielectric relaxation was modeled using the Vogel-Fulcher relationship with activation energy E-a = 0.017 +/- 0.002 eV and freezing temperature T-VF = 558 +/- 1 K. Relaxor behavior and the incidence of ferroelectric hystersis (P vs E) loop at room temperature suggested the coexistence of long-range polar ordering with the polar nanoregions induced by compositional fluctuations. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:457 / 460
页数:4
相关论文
共 23 条
  • [1] Phenomenological description of dielectric permittivity peak in relaxor ferroelectrics
    Bokov, AA
    Ye, ZG
    [J]. SOLID STATE COMMUNICATIONS, 2000, 116 (02) : 105 - 108
  • [2] Empirical scaling of the dielectric permittivity peak in relaxor ferroelectrics
    Bokov, AA
    Bing, YH
    Chen, W
    Ye, ZG
    Bogatina, SA
    Raevski, IP
    Raevskaya, SI
    Sahkar, EV
    [J]. PHYSICAL REVIEW B, 2003, 68 (05):
  • [3] Relaxor properties of lanthanum-doped bismuth layer-structured ferroelectrics
    Chen, XB
    Hui, R
    Zhu, J
    Lu, WP
    Mao, XY
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) : 5697 - 5700
  • [4] RELAXOR FERROELECTRICS: AN OVERVIEW
    Cross, L. Eric
    [J]. FERROELECTRICS, 1994, 151 (01) : 305 - 320
  • [5] FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES
    DEARAUJO, CAP
    CUCHIARO, JD
    MCMILLAN, LD
    SCOTT, MC
    SCOTT, JF
    [J]. NATURE, 1995, 374 (6523) : 627 - 629
  • [6] Templated grain growth of textured bismuth titanate
    Horn, JA
    Zhang, SC
    Selvaraj, U
    Messing, GL
    Trolier-McKinstry, S
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1999, 82 (04) : 921 - 926
  • [7] HUANG S, 2004, J APPL PHYS, V99, P76104
  • [8] Relaxor behavior of K0.5La0.5Bi2Nb2O9 ceramics
    Karthik, C.
    Ravishankar, N.
    Varma, K. B. R.
    Maglione, Mario
    Vondermuhll, R.
    Etourneau, J.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (04)
  • [9] Relaxor behavior of K0.5La0.5Bi2Ta2O9 ceramics
    Karthik, C.
    Ravishankar, N.
    Maglione, Mario
    Vondermuhll, R.
    Etourneau, J.
    Varma, K. B. R.
    [J]. SOLID STATE COMMUNICATIONS, 2006, 139 (06) : 268 - 272
  • [10] Structural phase transitions in the layered bismuth oxide BaBi4Ti4O15
    Kennedy, BJ
    Kubota, Y
    Hunter, BA
    Ismunandar
    Kato, K
    [J]. SOLID STATE COMMUNICATIONS, 2003, 126 (12) : 653 - 658