Silicon drift and pixel devices for X-ray imaging and spectroscopy

被引：14

作者：

Lutz, G ^{[1
]}

机构：

[1] MPI Halbleiterlabor, D-81739 Munich, Germany

来源：

JOURNAL OF SYNCHROTRON RADIATION | 2006年 / 13卷

关键词：

semiconductor detector; silicon drift detector; pixel detector; CCD; DEPFET; X-ray detection; X-ray spectroscopy; X-ray imaging;

D O I：

10.1107/S0909049506002214

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Starting from the basic photon detection process in semiconductors, the function, principles and properties of sophisticated silicon detectors are discussed. These detectors are based on, or inspired by, the semiconductor drift detector. They have already shown their potential in X-ray astronomy ( pnCCD) and in X-ray spectroscopy ( silicon drift diode), and further detector types ( DEPFET pixel detector and macro-pixel detector) are under development for several other future experiments. The detectors seem to be very well suited for synchrotron radiation experiments.

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收藏

页码：99 / 109

页数：11

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