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Sensing mechanism of SnO2(110) surface to H2: Density functional theory calculations
被引:54
|作者:
Chen, Yanping
[1
]
Wang, Xiaofeng
[1
,2
]
Shi, Changmin
[1
]
Li, Ling
[1
]
Qin, Hongwei
[1
]
Hu, Jifan
[1
]
机构:
[1] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Dalian Univ Technol Panjin, Sch Sci, Panjin 124221, Liaoning, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Gas sensor;
SnO2;
H-2;
Sensing mechanism;
DFT;
HYDROGEN DETECTION;
CARBON-MONOXIDE;
GAS SENSOR;
TIO2;
FILM;
SNO2;
CO;
SENSITIVITY;
OXIDE;
D O I:
10.1016/j.snb.2015.05.061
中图分类号:
O65 [分析化学];
学科分类号:
070302 ;
081704 ;
摘要:
Using density functional theory, we investigate the H-2-sensing mechanism of SnO2(1 1 0) surfaces to understand the H-2-sensing behaviors of SnO2 surfaces with different reduction degrees and their sensing mechanism at the atomic level. We found that oxygen concentration in the ambient atmosphere greatly affects the H-2-sensing mechanism of SnO2 surface. At considerable high oxygen concentrations H-2 interacts with oxygen species pre-adsorbed onto SnO2(1 1 0) surface, leading to electron release back to the semiconductor SnO2. When interacting with O-2(-), H-2 gas dissociates with one H atom to form hydroxyl adsorbed onto Sn site and another H atom adsorbed onto the oxygen atom of pre-adsorbed O-2(-); when interacting with the O-, H2O molecule is formed in the production. At very low oxygen concentration, structural reconstruction is induced by the interaction between H-2 and SnO2 sub-reduced surface with removed twofold-coordinated bridging oxygen rows, accompanying electron transfer from H-2 to surface without H2O formation. The above-calculated results are consistent with the experimental observation. (c) 2015 Elsevier B.V. All rights reserved.
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页码:279 / 287
页数:9
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