MoO3 Nanoplatelets based Schottky Diode for Low-Noise Sensors in Harsh Envionments

被引：0
|
作者：
Chen, Tianding [1 ]
Kuo, Weiting [1 ]
Yu, Jerry [1 ]
Ho, Derek [1 ]
机构：
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
来源：
2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2016年
关键词：
MoO3; Schottky Diode; nanoplatelets; thermal evaporation; barrier height; low-noise; sensor; harsh environment; TEMPERATURE; ALPHA-MOO3;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-temperature harsh environments demand sensors with thermodynamically stable properties. This paper presents a thermal dynamically stable, low noise Schottky diode based on nanostructured MoO3 nanoplatelets. Diode I-V characteristics, barrier height, and series resistance under different temperatures were investigated. Low diode turn-on voltage enables low power operation. MoO3 nanoplatelets with length, width, and thickness of 6.7 mu m, 3.1 mu m, and 0.4 mu m provide a significantly improved surface area-to-volume ratio, which is advantageous in high-sensitivity sensor applications.
引用
收藏
页码：464 / 467
页数：4
相关论文
共 15 条
  • [1] A Very Low-Noise Integrated 3MM-Wave Schottky Diode Mixer and PHEMT IF Amplifier
    V. I. Piddyachiy
    A. M. Korolev
    V. M. Shulga
    International Journal of Infrared and Millimeter Waves, 2005, 26 : 1381 - 1388
  • [2] A very low-noise integrated 3mm-wave Schottky diode mixer and PHEMT IF amplifier
    Piddyachiy, VI
    Korolev, AM
    Shulga, VM
    INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 2005, 26 (10): : 1381 - 1388
  • [3] Trimethylamine sensing properties of sensors based on MoO3 microrods
    Chu, Xiangfeng
    Liang, Shiming
    Sun, Wenqi
    Zhang, Wangbing
    Chen, Tongyun
    Zhang, Qianfeng
    SENSORS AND ACTUATORS B-CHEMICAL, 2010, 148 (02): : 399 - 403
  • [4] A Broad-Band Low-Noise Schottky Diode Full-Height Waveguide Mixer from 80 to 115 GHz
    V. I. Piddiachii
    S. A. Peskovatskii
    International Journal of Infrared and Millimeter Waves, 2003, 24 : 43 - 54
  • [5] A broad-band low-noise Schottky diode full-height waveguide mixer from 80 to 115 GHz
    Piddiachii, VI
    Peskovatskii, SA
    INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 2003, 24 (01): : 43 - 54
  • [6] Zirconia modified nanostructured MoO3 thin films deposited by spray pyrolysis technique for Cu/MoO3-ZrO2/p-Si structured Schottky barrier diode application
    Vivek, P.
    Chandrasekaran, J.
    Marnadu, R.
    Maruthamuthu, S.
    Balasubramani, V
    Balraju, P.
    OPTIK, 2019, 199
  • [7] Porous silicon/α-MoO3 nanohybrid based fast and highly sensitive CO2 gas sensors
    Thomas, Tijin
    Kumar, Y.
    Ramos Ramon, Jesus Alberto
    Agarwal, V
    Sepulveda Guzman, Selene
    Reshmi, R.
    Pushpan, Soorya
    Lugo Loredo, Shadai
    Sanal, K. C.
    VACUUM, 2021, 184 (184)
  • [8] Recoverable SnO2-based sensors promoted with MoO3 and Sb2O3 for the detection of DMMP
    Lee, Woo Suk
    Choi, Ho Yun
    Lee, Soo Chool
    Lee, Soo Jae
    Lee, Duk Dong
    Huh, Jeung Soo
    Kim, Jae Chang
    RARE METAL MATERIALS AND ENGINEERING, 2006, 35 : 155 - 156
  • [9] Investigation of Pt/Ga2O3-ZnO/SiC Schottky diode based hydrocarbon gas sensors
    Trinchi, A
    Li, YX
    Wlodarskia, W
    Kaciulis, S
    Pandolfi, L
    Viticoli, S
    NANO- AND MICROTECHNOLOGY: MATERIALS, PROCESSES, PACKAGING, AND SYSTEMS, 2002, 4936 : 327 - 336
  • [10] Selective hydrogen sulfide (H2S) sensors based on molybdenum trioxide (MoO3) nanoparticle decorated reduced graphene oxide
    MalekAlaie, M.
    Jahangiri, M.
    Rashidi, A. M.
    HaghighiAsl, A.
    Izadi, N.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 38 : 93 - 100
12