Influence of Oxide Semiconductor Thickness on Thin-Film Transistor Characteristics

被引：26

作者：

Nakata, Mitsuru ^{[1
]}

Tsuji, Hiroshi ^{[1
]}

Sato, Hiroto ^{[1
]}

Nakajima, Yoshiki ^{[1
]}

Fujisaki, Yoshihide ^{[1
]}

Takei, Tatsuya ^{[1
]}

Yamamoto, Toshihiro ^{[1
]}

Fujikake, Hideo ^{[1
]}

机构：

[1] NHK Sci & Technol Res Labs, Setagaya Ku, Tokyo 1578510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 03期

关键词：

D O I：

10.7567/JJAP.52.03BB04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discuss here the influence of oxide semiconductor thickness on thin-film transistor (TFT) characteristics. We have determined this influence by measuring the transfer characteristics of amorphous InGaZnO (IGZO) TFTs having various IGZO thicknesses and using a simple method to calculate the depletion width in IGZO films. ON current was nearly constant with respect to IGZO thickness because it depended on a high electron density in an accumulation region sufficiently thinner than the IGZO film. The threshold voltage shifted negatively with increasing IGZO thickness, which indicates that a thicker IGZO film requires a higher negative gate voltage for it to be fully depleted. Calculation results suggest that threshold voltage variation due to IGZO thickness variation increases with increasing donor density and IGZO thickness. (c) 2013 The Japan Society of Applied Physics

引用

页数：5

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