Patterning of graphene on silicon-on-insulator waveguides through laser ablation and plasma etching

被引：0

作者：

Van Erps, Jurgen ^{[1
]}

Ciuk, Tymoteusz ^{[2
]}

Pasternak, Iwona ^{[2
]}

Krajewska, Aleksandra ^{[2
]}

Strupinski, Wlodek ^{[2
]}

Van Put, Steven ^{[3
,4
]}

Van Steenberge, Geert ^{[3
,4
]}

Baert, Kitty ^{[5
]}

Terryn, Herman ^{[5
]}

Thienpont, Hugo ^{[1
]}

Vermeulen, Nathalie ^{[1
]}

机构：

[1] Vrije Univ Brussel, Brussels Photon Team B PHOT, Dept Appl Phys & Photon, Pl Laan 2, B-1050 Brussels, Belgium

[2] Inst Elect Mat Technol, Wolczynska 133, PL-01919 Warsaw, Poland

[3] IMEC, Ctr Microsyst Technol CMST, Technol Pk 914A, B-9052 Ghent, Belgium

[4] Univ Ghent, Technol Pk 914A, B-9052 Ghent, Belgium

[5] Vrije Univ Brussel, Res Grp Electrochem & Surface Engn SURF, Pl Laan 2, B-1050 Brussels, Belgium

来源：

SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS V | 2016年 / 9891卷

关键词：

graphene; laser ablation; loss measurement; plasma etching; Raman spectroscopy; silicon photonics; waveguides;

D O I：

10.1117/12.2225224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the use of ferntosecond laser ablation for the removal of monolayer grapheme from silicon-on-insulator (SOI) waveguides, and the use of oxygen plasma etching through a metal mask to peel off graphene from the grating couplers attached to the waveguides. Through Raman spectroscopy and atomic force microscopy, we show that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method. This loss contribution is measured to he 0.132 dB/mu m.

引用

页数：7

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