Magnetic memory in ferromagnetic thin films via exchange coupling

被引：14

作者：

Chesnel, K. ^{[1
]}

Fullerton, E. E. ^{[2
]}

Carey, M. J. ^{[2
]}

Kortright, J. B. ^{[1
]}

Kevan, S. D. ^{[3
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[2] Hitachi Global Storage Technol, San Jose, CA 95135 USA

[3] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 13期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.78.132409

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show the possibility of creating magnetic domain memory in thin ferromagnetic films by inducing spatially varying exchange coupling interactions. We evidence this phenomenon in a perpendicular exchange bias film made of [Co/Pd] IrMn multilayers. Our coherent x-ray magnetic scattering speckle correlation study shows that the film exhibits no memory at room temperature but acquires a very high degree of magnetic memory, above 80% with subsequent field cycling when the sample is zero-field cooled below the blocking temperature of the IrMn layers (T < 275 K).

引用

页数：4

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