Electrical and Optical Characterization of Mg doping in GaN

被引：2
|
作者：
Azimah, E. [1 ]
Zainal, N. [1 ]
Hassan, Z. [1 ]
Shuhaimi, A. [2 ]
Bahrin, Azlan [1 ]
机构：
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelectron Res & Technol, George Town 11800, Malaysia
[2] Univ Malaya, Fac Sci, Dept Phys, LDMRC, Kuala Lumpur 50603, Malaysia
来源：
ADVANCED X-RAY CHARACTERIZATION TECHNIQUES | 2013年 / 620卷
关键词：
Mg doped GaN; PL; I-V; annealing temperature;
D O I：
10.4028/www.scientific.net/AMR.620.453
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Apossible evidence of Mg related emission in Mg doped GaN material is observed inoptical measurement, even without thermal annealing. Meanwhile, the electrical properties of the sample improve when Ni/Au contact layer was annealed up to 400 degrees C, but degrade at further temperature. We propose that such behavior isrelated to degradation of surface morphology of metal contact at higher temperature.
引用
收藏
页码：453 / +
页数：2
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