Analysis of silicon carbide growth by sublimation sandwich method

Basic mechanisms of growth of silicon carbide crystals using the sublimation sandwich method with reactive SIC-C or SiC-Si environment are studied both theoretically and experimentally. Dependence of the growth rate on the process parameters (substrate temperature, temperature difference between the source and the substrate, and temperature of the environment) is calculated using an advanced thermodynamic model. The effect of the environment on 6H-SiC growth is studied in detail. The theoretical results are compared to the experimental data.