GaN Schottky Barrier Photodetectors with a β-Ga2O3 Cap Layer

被引：4

作者：

Huang, Zhen-Da ^{[1
,2
]}

Chuang, Ricky Wenkuei ^{[1
,2
,3
,4
,5
]}

Weng, Wen-Yin ^{[1
,2
]}

Chang, Shoou-Jinn ^{[1
,2
,3
,4
]}

Chiu, Chiu-Jung ^{[1
,2
]}

Wu, San-Lein ^{[6
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[4] Natl Cheng Kung Univ, AOTC, Tainan 70101, Taiwan

[5] Natl Nano Device Labs NDL, Tainan 74147, Taiwan

[6] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 11期

关键词：

N-TYPE GAN; THIN-FILMS; ULTRAVIOLET PHOTODETECTORS; THREADING DISLOCATIONS; DETECTORS; PERFORMANCE; DEPOSITION; EPITAXY; GROWTH;

D O I：

10.1143/APEX.5.116701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN Schottky barrier UV photodetectors (PDs) with a beta-Ga2O3 cap layer realized by furnace oxidation of GaN epitaxial layer were fabricated and characterized. With the cap layer inserted, it was found that the reverse leakage current could be reduced by more than 4 orders of magnitude and the UV-to-visible rejection ratio increased by 21 times. When compared with the conventional GaN PDs, incorporating an additional beta-Ga2O3 cap layer helps to reduce the noise level and at the same time achieve a larger detectivity. (C) 2012 The Japan Society of Applied Physics

引用

页数：3