Non-Conductive Film Underfill for 3D Integration of 20 μm-Thick LSI Wafers with Fine Cu-TSVs

被引：0

作者：

Murugesan, M. ^{[1
]}

Bea, J. C. ^{[1
]}

Koyanagi, M. ^{[1
]}

Ito, Y. ^{[2
]}

Fukushima, T. ^{[2
]}

Tanaka, T. ^{[2
]}

机构：

[1] Tohoku Univ, NICHe, GINTI, Sendai, Miyagi, Japan

[2] Tohoku Univ, Dept Biomed Engn, Sendai, Miyagi, Japan

来源：

2016 27TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC) | 2016年

关键词：

NCF; mu-XRD; Thermo-Mechanical Stress;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The beneficial role played by non-conductive film (NCF) under-fill (UF) compared with the conventional capillary under fill (CUF) is meticulously investigated for the reliability issues in high-density 3D-integration at die/wafer-level. The NCF with co-efficient of thermal expansion (CTE) value of 35 ppm/degrees C tremendously reduces the local deformation of 20 mu m-thick three-dimensionally (3D)-stacked LSI die/wafer. This reduces the local mechanical stress in thinned 3D-LSI by nearly 5 times as against the CUF with the CTE value of 60 - 70 ppm/degrees C. Both mu-RS and mu-XRD data showed only similar to 250 MPa of tensile stress on the back surface of 20 mu m-thick stacked die/wafer with NCFUF, whereas it was more than five-times larger (similar to 1400 MPa) for CUF. mu-XRD data illustrates that the cause for residual stress in the bump-space region and above the mu-bump are respectively due to the lattice tilt and change in lattice space.

引用

页码：466 / 471

页数：6

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