Thermal instability effects in SiC Power MOSFETs

被引：40

作者：

Castellazzi, Alberto ^{[1
]}

Funaki, Tsuyoshi ^{[2
]}

Kimoto, Tsunenobu ^{[3
]}

Hikihara, Takashi ^{[4
]}

机构：

[1] Univ Nottingham, Power Elect Machines & Control Grp, Nottingham NG7 2RD, England

[2] Osaka Univ, Power Syst Lab, Suita, Osaka 5650871, Japan

[3] Kyoto Univ, Semicond Sci & Engn Lab, Katsura, Kyoto 6158510, Japan

[4] Kyoto Univ, Power Convers & Syst Control Lab, Katsura, Kyoto 6158510, Japan

来源：

MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 9-10期

关键词：

D O I：

10.1016/j.microrel.2012.06.096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain-source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigation for devices of different voltage classes (600 and 1200 V) and different manufacturers, highlighting important differences in electro-thermal performance and failure mode as compared to Si devices. The goal is to derive information for design optimisation and reliable device development for a diverse range of target applications. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：2414 / 2419

页数：6

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