Wave vector filtering of electron in semiconductor nanostructure comprising of δ-magnetic-barrier and rectangular electric-barrier

Based on combination of a delta-magnetic-barrier (MB) and a rectangular electric-barrier (EB), we propose a semiconductor nanostructure, which can be experimentally achieved by placing a half-infinitely wide ferromagnetic (FM) stripe with horizontal magnetization and a Schottky-metal (SM) stripe applied by negative voltage on the surface of GaAs/AlxGa1-xAs heterostructure. We theoretically study wave vector filtering (WVF) for electron in the semiconductor nanostructure. A considerable WVF effect is revealed because of two-dimensional (2D) motion for electron across the semiconductor nanostructure. WVF efficiency can be manipulated by MB or EB owing to the MB or EB dependent effective potential experienced by electron in the semiconductor nanostructure. These interesting findings may be helpful for designing electron-momentum filter in the area of nanoelectronics devices. (C) 2022 Elsevier B.V. All rights reserved.