Bidirectional ESD Protection Device Using PNP With pMOS-Controlled Nwell Bias

被引：13

作者：

Lai, Da-Wei ^{[1
]}

de Raad, Gijs ^{[1
]}

Tseng, Wei-Jhih ^{[2
]}

Smedes, Theo ^{[1
]}

Huitsing, Albert Jan ^{[1
]}

机构：

[1] NXP Semicond, Prod & Technol Enablement Design Enablement ESD L, NL-6534 AE Nijmegen, Netherlands

[2] NXP Semicond, High Voltage Power Team, Frontend Innovat, NL-6534 AE Nijmegen, Netherlands

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 03期

关键词：

Dual-direction; bidirectional; PNP; electrostatic discharge (ESD); latch-up immunity; transmission line pulse (TLP); SCR;

D O I：

10.1109/LED.2018.2795253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a PNP-based bidirectional ESD protection device with base bias controlled by two pMOS transistors, realized in a 0.18-mu m CMOS process for 5-7 V applications. With respect to the conventional floating-base PNP device, very similar ESD performance is achieved. Due to the presence of extra parasitic diodes, the dc breakdown (VBD) and holding (VH) voltages are extended up to 8.0 and 7.6 V at 150 degrees C, respectively. Only a very limited area increase is needed and no extra mask is required for this implementation.

引用

页码：331 / 334

页数：4

共 19 条

[1]

[Anonymous], P IEEE INT REL PHYS

[2]

[Anonymous], ESD DESIGN ANALOG CI

[3]

[Anonymous], SHOCK VIBRATION

[4] Layout optimization on low-voltage-triggered PNP devices for ESD protection in mixed-voltage I/O interfaces [J].

Chang, WJ ;

Ker, MD .

IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2004, :213-216

[5] A New High Holding Voltage Dual-Direction SCR With Optimized Segmented Topology [J].

Huang, Xiaozong ;

Liou, Juin J. ;

Liu, Zhiwei ;

Liu, Fan ;

Liu, Jizhi ;

Cheng, Hui .

IEEE ELECTRON DEVICE LETTERS, 2016, 37 (10) :1311-1313

[6]

Ker MD, 2004, ISQED 2004: 5TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, PROCEEDINGS, P433

[7]

Linten D., 2014, P EL OV EL DISCH S E, P1

[8]

Liu JA, 2010, IEEE BIPOL BICMOS, P149, DOI 10.1109/ICCMS.2010.403

[9]

Liu J, 2011, IEEE RADIO WIRELESS, P279, DOI 10.1109/RWS.2011.5725504

[10] Bidirectional Diode-Triggered Silicon-Controlled Rectifiers for Low-Voltage ESD Protection [J].

Liu, Wen ;

Liou, Juin J. ;

Yeh, Han-Chih ;

Wang, Huei ;

Li, You ;

Yeo, Kiat Seng .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (10) :1360-1362

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