Highly n-type doped InGaN films for efficient direct solar hydrogen generation

被引：7

作者：

Mauder, C. ^{[1
]}

Tuna, Oe ^{[2
]}

Gutrath, B. ^{[3
]}

Balmes, V. ^{[1
]}

Behmenburg, H. ^{[1
]}

Rzheutskii, M. V. ^{[4
]}

Lutsenko, E. V. ^{[4
]}

Yablonskii, G. P. ^{[4
]}

Noyong, M. ^{[3
]}

Simon, U. ^{[3
]}

Heuken, M. ^{[1
,2
]}

Kalisch, H. ^{[1
]}

Vescan, A. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, GaN Device Technol, Sommerfeldstr 24, D-52074 Aachen, Germany

[2] AIXTRON SE, D-52134 Herzogenrath, Germany

[3] Rhein Westfal TH Aachen, Inst Inorgan Chem, D-52074 Aachen, Germany

[4] Natl Acad Sci Belarus, Stepanov Inst Phys, Minsk 220072, BELARUS

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期

关键词：

MOVPE; InGaN; photoelectrolysis; solar water; splitting; WATER;

D O I：

10.1002/pssc.201100400

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the metal organic vapour phase epitaxy (MOVPE) and characterization of n-type InGaN films for application in direct solar water splitting. The 40 nm thick films exhibit an In fraction of 15% and show good structural quality and a surface root mean square (RMS) roughness of only 0.7 nm. An electron concentration of 9 x 10(18) cm(-3) at a mobility of 185 cm(2)/Vs is assessed. The emission peak in photoluminescence (PL) spectra taken at room temperature (RT) is at 2.8 eV, which is consistent to transmission data and the expected bandgap value for this composition. Illumination of the InGaN electrode with a Xe lamp in a 1 M NaOH electrolyte solution at zero external voltage induces a photocurrent (PC) of 0.13 mA/cm(2) with a pronounced overshoot in the first few seconds, which we explain by the discharging of a Helmholtz bilayer capacitor. The PC linearly increases with applied voltage while the estimated total conversion efficiency peaks at 0.6 V. Although hydrogen bubbles visibly evolve from the Pt counter electrode, total conversion efficiencies are limited to 0.05%, which is ascribed to incomplete utilization of the optical excitation spectrum and low thickness of both the InGaN film and the space charge region at the semiconductor surface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：964 / 967

页数：4

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