Built-in electric field effect on the hydrogenic donor impurity in wurtzite InGaN quantum dot

被引：9

作者：

Jiang, F. C. ^{[2
]}

Xia, Congxin ^{[1
]}

Liu, Y. M. ^{[3
]}

Wei, S. Y. ^{[2
]}

机构：

[1] Henan Normal Univ, Dept Phys, Xinxiang 453007, Peoples R China

[2] Zhengzhou Univ Light Ind, Dept Technol & Phys, Zhengzhou 450002, Peoples R China

[3] Henan Normal Univ, Sch Mech & Elect, Xinxiang 453007, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 08期

基金：

中国国家自然科学基金;

关键词：

quantum dot; hydrogenic impurity; built-in electric field;

D O I：

10.1016/j.physe.2007.12.020

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The donor binding energy of the hydrogenic impurity is calculated as functions of the impurity position and structural parameters of wurtzite (WZ) InGaN/GaN quantum dot (QD). Numerical results show that the strong built-in electric field induces an asymmetrical distribution of the donor binding energy with respect to the center of the QD. When the impurity is located at the right boundary of the WZ InGaN/GaN QD, the donor binding energy is insensitive to the dot height, and it is largest when In composition x = 0.3 for different WZ InGaN/GaN QD. Realistic cases, including the impurity in the QD and the surrounding barriers. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2714 / 2719

页数：6

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