Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes

被引：41
|
作者：
Zhang, Yiyun [1 ]
Xie, Haizhong [1 ]
Zheng, Haiyang [2 ]
Wei, Tongbo [1 ]
Yang, Hua [1 ]
Li, Jing [1 ]
Yi, Xiaoyan [1 ]
Song, Xiangyang [3 ]
Wang, Guohong [1 ]
Li, Jinmin [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China
[3] JPSA Corp, Hollis, NH USA
来源：
OPTICS EXPRESS | 2012年 / 20卷 / 06期
关键词：
INCREASE; OUTPUT;
D O I：
10.1364/OE.20.006808
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report a multiple laser stealth dicing (multi-LSD) method to improve the light extraction efficiency (LEE) of InGaN-based light-emitting diodes (LEDs) using a picosecond (Ps) laser. Compared with conventional LEDs scribed by a nanosecond (Ns) laser and single stealth-diced LEDs, the light output power (LOP) of the LEDs using multi-LSD method can be improved by 26.5% and 11.2%, respectively. The enhanced LOP is due to the increased side emission from the large-area roughened sidewalls of the sapphire substrates fabricated in the multi-LSD process. Numerical simulation results show that the multi-LSD process has little thermal damages to the multiple quantum wells (MQWs) of the LEDs. (C) 2012 Optical Society of America
引用
收藏
页码：6808 / 6815
页数：8
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