Magnetophonons in short-period superlattices

被引:20
作者
Gassot, P
Genoe, J
Maude, DK
Portal, JC
Dalton, KSH
Symons, DM
Nicholas, RJ
Aristone, F
Palmier, JF
Laruelle, F
机构
[1] INST NATL SCI APPL, F-31077 TOULOUSE, FRANCE
[2] UNIV OXFORD, DEPT PHYS, CLARENDON LAB, OXFORD OX1 3PU, ENGLAND
[3] FRANCE TELECOM, F-92220 BAGNEUX, FRANCE
[4] CNRS, MICROSTRUCT & MICROELECT LAB, F-92220 BAGNEUX, FRANCE
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 20期
关键词
D O I
10.1103/PhysRevB.54.14540
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the observation of magnetophonon resonances on the background of the longitudinal magneto-conductance in short-period GaAs/AlAs semiconductor superlattices. Both the GaAs and the AlAs longitudinal optical phonons are observed. We show how the enhancement of the magnetophonon effect with electric field is connected to the shift of the electron distribution towards the high-velocity and low-density-of-states region at the midpoint of the reduced Brillouin zone. The observed temperature dependence can be explained by considering the competition between the phonon population and the electron lifetime. The two superposed series of the GaAs and the AlAs optical phonons are shifted when hydrostatic pressure is applied and the relative strength of each series changes as the Gamma miniband comes closer to the X states.
引用
收藏
页码:14540 / 14549
页数:10
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