Growth behavior and microstructure of ZnO epilayer on γ-LiAlO2(100) substrate by chemical vapor deposition

被引：10
作者：
Chang, Liuwen [1 ]
Chou, Mitch M. C. [1 ]
Hwang, Teng-Hsing [1 ]
Chen, Chun-Wei [2 ]
机构：
[1] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan
[2] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10764, Taiwan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 02期
关键词：
THREADING DISLOCATIONS; OPTICAL-PROPERTIES; MOCVD GROWTH; FILMS; GAN; EPITAXY; DEFECTS;
D O I：
10.1002/pssa.200880412
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Low lattice-mismatched gamma-LiAlO2(100) substrates were employed to grow ZnO epitaxial films by chemical vapor deposition. The influence of growth temperature on growth behavior of ZnO was investigated. Results indicated that the low lattice-matched (10 (1) over bar0) crystallites nucleate on substrate at all growth temperatures employed. However, a second type of crystallites having an (0001) orientation can also nucleate on substrate at low growth temperature of 575 degrees C and 640 degrees C. The growth rate of the later crystallite is, however, higher than that of the (10 (1) over bar0) one and finally results in a single crystalline ZnO film having an [0001] azimuthal orientation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：215 / 219
页数：5
相关论文
共 23 条
[11]   Microstructure of M-plane GaN epilayers grown on γ-LiAlO2 by plasma-assisted molecular beam epitaxy [J].
Liu, TY ;
Trampert, A ;
Sun, YJ ;
Brandt, O ;
Ploog, KH .
PHILOSOPHICAL MAGAZINE LETTERS, 2004, 84 (07) :435-441
[12]  
LIU TY, 2004, THESIS HUMBOLDT U BE
[13]   ZnO film growth on (01(1)over-bar2)LiTaO3 by electron cyclotron resonance-assisted molecular beam epitaxy and determination of its polarity [J].
Nakamura, K ;
Shoji, T ;
Kang, HB .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (6A) :L534-L536
[14]   Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001) substrates [J].
Ohtomo, A ;
Tamura, K ;
Saikusa, K ;
Takahashi, K ;
Makino, T ;
Segawa, Y ;
Koinuma, H ;
Kawasaki, M .
APPLIED PHYSICS LETTERS, 1999, 75 (17) :2635-2637
[15]   Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition [J].
Rosner, SJ ;
Carr, EC ;
Ludowise, MJ ;
Girolami, G ;
Erikson, HI .
APPLIED PHYSICS LETTERS, 1997, 70 (04) :420-422
[16]   Influence of different types of threading dislocations on the carrier mobility and photoluminescence in epitaxial GaN [J].
Shi, JY ;
Yu, LP ;
Wang, YZ ;
Zhang, GY ;
Zhang, H .
APPLIED PHYSICS LETTERS, 2002, 80 (13) :2293-2295
[17]   Impact of nucleation conditions on the structural and optical properties of M-plane GaN(1(1)over-bar-00) grown on γ-LiAlO2 [J].
Sun, YJ ;
Brandt, O ;
Jahn, U ;
Liu, TY ;
Trampert, A ;
Cronenberg, S ;
Dhar, S ;
Ploog, KH .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) :5714-5719
[18]   Epitaxial growth of ZnO films on lattice-matched ScAlMgO4(0001) substrates [J].
Tamura, K ;
Ohtomo, A ;
Saikusa, K ;
Osaka, Y ;
Makino, T ;
Segawa, Y ;
Sumiya, M ;
Fuke, S ;
Koinuma, H ;
Kawasaki, M .
JOURNAL OF CRYSTAL GROWTH, 2000, 214 :59-62
[19]   Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO [J].
Tsukazaki, A ;
Ohtomo, A ;
Onuma, T ;
Ohtani, M ;
Makino, T ;
Sumiya, M ;
Ohtani, K ;
Chichibu, SF ;
Fuke, S ;
Segawa, Y ;
Ohno, H ;
Koinuma, H ;
Kawasaki, M .
NATURE MATERIALS, 2005, 4 (01) :42-46
[20]   Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO2 [J].
Vanfleet, RR ;
Simmons, JA ;
Maruska, HP ;
Hill, DW ;
Chou, MMC ;
Chai, BH .
APPLIED PHYSICS LETTERS, 2003, 83 (06) :1139-1141
123