Growth behavior and microstructure of ZnO epilayer on γ-LiAlO2(100) substrate by chemical vapor deposition

被引：10
作者：
Chang, Liuwen [1 ]
Chou, Mitch M. C. [1 ]
Hwang, Teng-Hsing [1 ]
Chen, Chun-Wei [2 ]
机构：
[1] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan
[2] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10764, Taiwan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 02期
关键词：
THREADING DISLOCATIONS; OPTICAL-PROPERTIES; MOCVD GROWTH; FILMS; GAN; EPITAXY; DEFECTS;
D O I：
10.1002/pssa.200880412
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Low lattice-mismatched gamma-LiAlO2(100) substrates were employed to grow ZnO epitaxial films by chemical vapor deposition. The influence of growth temperature on growth behavior of ZnO was investigated. Results indicated that the low lattice-matched (10 (1) over bar0) crystallites nucleate on substrate at all growth temperatures employed. However, a second type of crystallites having an (0001) orientation can also nucleate on substrate at low growth temperature of 575 degrees C and 640 degrees C. The growth rate of the later crystallite is, however, higher than that of the (10 (1) over bar0) one and finally results in a single crystalline ZnO film having an [0001] azimuthal orientation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：215 / 219
页数：5
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