Design of high-reliability LDO with current limiting characteristics with built-in new high tolerance ESD protection circuit
被引:2
作者:
Jung, Jin Woo
论文数: 0引用数: 0
h-index: 0
机构:
Univ Dankook, Dept Elect & Elect Engn, Yongin 448701, Gyeonggi Do, South KoreaUniv Dankook, Dept Elect & Elect Engn, Yongin 448701, Gyeonggi Do, South Korea
Jung, Jin Woo
[1
]
论文数: 引用数:
h-index:
机构:
Koo, Yong Seo
[1
]
Lee, Kwang Yeob
论文数: 0引用数: 0
h-index: 0
机构:
Univ Seokyeong, Dept Comp Engn, Seoul, South KoreaUniv Dankook, Dept Elect & Elect Engn, Yongin 448701, Gyeonggi Do, South Korea
Lee, Kwang Yeob
[2
]
机构:
[1] Univ Dankook, Dept Elect & Elect Engn, Yongin 448701, Gyeonggi Do, South Korea
[2] Univ Seokyeong, Dept Comp Engn, Seoul, South Korea
来源:
IEICE ELECTRONICS EXPRESS
|
2013年
/
10卷
/
20期
关键词:
current sensing;
LDO;
low drop out regulator;
ESD;
D O I:
10.1587/elex.10.20130516
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This paper proposes the Low-Dropout regulator including the "load current sensing circuit". The load current sensing circuit senses the change of the load current and then reduces the ripple of the output voltage. The load transient response characteristic of the Low-Dropout regulator is improved by this method. And this paper uses a body driven technique to enhance the current driving capability for pass transistor. The proposed circuit is simulated by HSPICE with a 0.18 mu m BCD process parameter. In addition, this paper enhances the reliability of IC by equipping the P-substrate triggered SCR type ESD protection device.