Self-organized gate stack of Ge nanosphere/SiO2/Si1-xGex enables Ge-based monolithically-integrated electronics and photonics on Si platform

被引：0

作者：

Liao, P. H. ^{[1
]}

Kuo, M. H. ^{[1
]}

Tien, C. W. ^{[2
,3
]}

Chang, Y. L. ^{[2
,3
]}

Hong, P. Y. ^{[2
,3
]}

George, T. ^{[1
]}

Lin, H. C. ^{[2
,3
]}

Li, P. W. ^{[1
,2
,3
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Taoyuan, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

来源：

2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY | 2018年

关键词：

Ge; junctionless; phototransistor; monolithic integration;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first-of-its-kind, self-organized gate stack of Ge nanosphere (NP) gate/SiO2/Si1-xGex channel fabricated in a single oxidation step. Process-controlled tunability of the Ge NP size (5-90nm), SiO2 thickness (2-4nm), and Ge content (x = 0.65-0.85) and strain engineering (epsilon(comp) = 1-3%) of the Si1-xGex are achieved. We demonstrated Ge junctionless (JL) n-FETs and photoMOSFETs (PTs) as amplifier and photodetector, respectively, for Ge receivers. L-G of 75nm JL n-FETs feature I-ON/I-OFF > 5x10(8), I-ON > 500 mu A/mu m at V-DS = 1V, T= 80K. Ge-PTs exhibit superior photoresponsivity > 1,000A/W and current gain linearity ranging from nW-mW for 850nm illumination. Size-tunable photo-luminescence (PL) of 300-1600nm (NUV-NIR) are observed on 5-100nm Ge NPs. Our gate stack of Ge NP/SiO2/Si1-xGex enables a practically achievable building block for monolithically-integrated Ge electronic and photonic ICs (EPICs) on Si.

引用

页码：157 / 158

页数：2

共 9 条

[1]

Chang W., 2016, IEEE EDL, V37, P253

[2]

Chung C. T., 2012, IEDM, P383

[3] 'Symbiotic' semiconductors: unusual and counter-intuitive Ge/Si/O interactions [J].