Structural and electrical characteristics of nitrogen-doped nanocrystalline diamond films prepared by CVD

被引：19

作者：

Hu, Qiang ^{[2
]}

Hirai, Makoto ^{[1
]}

Joshi, Rakesh K. ^{[2
]}

Kumar, Ashok ^{[1
,2
]}

机构：

[1] Univ S Florida, Nanomat & Nanomfg Res Ctr, Tampa, FL 33620 USA

[2] Univ S Florida, Dept Mech Engn, Tampa, FL 33620 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 02期

基金：

美国国家科学基金会;

关键词：

THIN-FILMS; CONTACTS; RAMAN;

D O I：

10.1088/0022-3727/42/2/025301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen-doped nanocrystalline diamond (N-NCD) films were grown using microwave plasma enhanced chemical vapour deposition method. Films were characterized by Raman spectroscopy, x-ray diffraction and scanning electron microscopy. Perfectly ohmic contacts for the N-doped NCD film and p-type Si substrate were obtained using silver (Ag). Silver deposited at a temperature of 250 degrees C with the pulsed laser deposition method was found to show ohmic behaviour with a high degree of reproducibility. Current-voltage (I-V) characteristics are presented for various Ag/N-NCD and Ag-Si. Rectifying I-V behaviour for the interface N-NCD/p-Si suggests that the majority carriers for N-NCD are electrons.

引用

页数：4

共 27 条

[1]

ALAN TC, 1996, CERAM INT, V22, P321

[2] Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films [J].

Bhattacharyya, S ;

Auciello, O ;

Birrell, J ;

Carlisle, JA ;

Curtiss, LA ;

Goyette, AN ;

Gruen, DM ;

Krauss, AR ;

Schlueter, J ;

Sumant, A ;

Zapol, P .

APPLIED PHYSICS LETTERS, 2001, 79 (10) :1441-1443

[3] Bonding structure in nitrogen doped ultrananocrystalline diamond [J].

Birrell, J ;

Gerbi, JE ;

Auciello, O ;

Gibson, JM ;

Gruen, DM ;

Carlisle, JA .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :5606-5612

[4] A REVIEW OF THE ELECTRICAL CHARACTERISTICS OF METAL CONTACTS ON DIAMOND [J].

DAS, K ;

VENKATESAN, V ;

MIYATA, K ;

DREIFUS, DL ;

GLASS, JT .

THIN SOLID FILMS, 1992, 212 (1-2) :19-24

[5] Origin of the 1150-cm-1 Raman mode in nanocrystalline diamond -: art. no. 121405 [J].

Ferrari, AC ;

Robertson, J .

PHYSICAL REVIEW B, 2001, 63 (12)

[6] Characterization of n-n Ge/SiC heterojunction diodes [J].

Gammon, P. M. ;

Perez-Tomas, A. ;

Jennings, M. R. ;

Roberts, G. J. ;

Davis, M. C. ;

Shah, V. A. ;

Burrows, S. E. ;

Wilson, N. R. ;

Covington, J. A. ;

Mawby, P. A. .

APPLIED PHYSICS LETTERS, 2008, 93 (11)

[7] Electrical contacts to ultrananocrystalline diamond [J].

Gerbi, JE ;

Auciello, O ;

Birrell, J ;

Gruen, DM ;

Alphenaar, BW ;

Carlisle, JA .

APPLIED PHYSICS LETTERS, 2003, 83 (10) :2001-2003

[8] CONTACTS TO DOPED AND UNDOPED POLYCRYSTALLINE DIAMOND FILMS [J].

HARPER, RE ;

JOHNSTON, C ;

CHALKER, PR ;

TOTTERDELL, D ;

BUCKLEYGOLDER, IM ;

WERNER, M ;

OBERMEIER, E ;

VANROSSUM, M .

[9] Effects of plasma treatments on the nitrogen incorporated nanocrystalline diamond films [J].

Jeedigunta, Sathyaharish ;

Xu, Zhenqing ;

Hirai, Makoto ;

Spagnol, Priscila ;

Kumar, Ashok .

[10] Electrical contacts to nitrogen incorporated nanocrystalline diamond films [J].

Jeedigunta, Sathyaharish ;

Spagnol, Priscila ;

Bumgarner, John ;

Kumar, Ashok .

← 1 2 3 →