Effects of Ga content on thermoelectric properties of P-type Ba8Ga16+x Zn3Ge27-x type-I clathrates

被引：12
作者：
Deng, Shu-kang [1 ]
Tang, Xin-feng [2 ]
Yang, Pei-zhi [1 ]
Li, Ming [1 ]
机构：
[1] Yunnan Normal Univ, Educ Minist, Key Lab Renewable Energy Adv Mat & Mfg Technol, Kunming 650092, Peoples R China
[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE | 2009年 / 44卷 / 04期
关键词：
THERMAL-CONDUCTIVITY;
D O I：
10.1007/s10853-008-3205-x
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
P-type Ba8Ga16+x Zn3Ge27-x (x = 0.1, 0.2, 0.3, and 0.4) type-I clathrates were synthesized by combining solid-state reaction with spark plasma sintering (SPS) technology. The effects of slight increase of Ga content on thermoelectric properties have been investigated. The results show that at room temperature the carrier concentration N (p) of p-type Ba8Ga16+x Zn3Ge27-x clathrates increases remarkably compared with that of Ba8Ga16Zn3Ge27 compound, which results in the increases of electrical conductivity although carrier mobility mu (H) slightly decreases. The thermal conductivity kappa of all samples increases with the increase of Ga content. Ba8Ga16.2Zn3Ge26.8 compound exhibits the highest ZT value of 0.43 at 700 K, which is increased by 13% compared with that of Ba8Ga16Zn3Ge27 compound.
引用
收藏
页码：939 / 944
页数：6
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