Nonmonotonous Capacitance-Voltage Characteristics in Metal-Glass-Semiconductor Structures

被引：1

作者：

Vlasov, S. I. ^{[1
]}

Nasirov, A. A. ^{[1
]}

Mamatkarimov, O. O. ^{[1
]}

Ergasheva, M. A. ^{[1
]}

机构：

[1] Natl Univ Uzbekistan, Tashkent 100174, Uzbekistan

来源：

SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY | 2008年 / 44卷 / 03期

关键词：

Semiconductor Structure; Glass Layer; Deep Center; Acceptor Center; Nonmonotonous Behavior;

D O I：

10.3103/S1068375508030162

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The nature of nonmonotonous behavior of high-frequency capacitance-voltage characteristics of metal-glass-semiconductor structures is investigated. It is shown that the nonmonotonous variation in capacitance of metal-glass-semiconductor structures at inverse voltages can be caused by the presence of structure defects of acceptor nature in the glass in the layer adjacent to the glass-semiconductor interface.

引用

页码：250 / 251

页数：2

共 8 条

[1]

BERMAN LS, 1978, IZV AN SSSR FIZ+, V42, P1175

[2]

BERMAN LS, 1981, EMKOSTNAYA SPECTROSK

[3]

GERGEL VA, 1983, ZH EKSP TEOR FIZ+, V84, P719

[4]

LITOVCHENKO VG, 1978, OSNOVY FIZIKI MIKROE

[5]

Nicollian E.H., 1982, MOS PHYS TECHNOLOGY

[6]

PARCHINSKII PB, 2002, IAN SSSR NEORG MATER, V38, P750

[7]

VLASOV SI, 2004, DN PRIKLADNYE VOPROS, P379

[8] INTERFACE-STATE GENERATION IN RADIATION-HARD OXIDES [J].

WINOKUR, PS ;

BOESCH, HE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1647-1650

← 1 →