Nonmonotonous Capacitance-Voltage Characteristics in Metal-Glass-Semiconductor Structures

被引：1
|
作者：
Vlasov, S. I. [1 ]
Nasirov, A. A. [1 ]
Mamatkarimov, O. O. [1 ]
Ergasheva, M. A. [1 ]
机构：
[1] Natl Univ Uzbekistan, Tashkent 100174, Uzbekistan
来源：
SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY | 2008年 / 44卷 / 03期
关键词：
Semiconductor Structure; Glass Layer; Deep Center; Acceptor Center; Nonmonotonous Behavior;
D O I：
10.3103/S1068375508030162
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The nature of nonmonotonous behavior of high-frequency capacitance-voltage characteristics of metal-glass-semiconductor structures is investigated. It is shown that the nonmonotonous variation in capacitance of metal-glass-semiconductor structures at inverse voltages can be caused by the presence of structure defects of acceptor nature in the glass in the layer adjacent to the glass-semiconductor interface.
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页码：250 / 251
页数：2
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