A Physics-Based Model and Its Solution Methodology for Hysteresis Mobile-Ionic Dielectrics

被引:0
作者
Chen, Jiajia [1 ]
Liu, Huan [1 ]
Jin, Chengji [1 ]
Gong, Zhi [1 ]
Yang, Shiyou [2 ]
Yu, Xiao [1 ]
机构
[1] Zhejiang Lab, Res Ctr Intelligent Chips & Devices, Hangzhou, Peoples R China
[2] Zhejiang Univ, Coll Elect Engn, Hangzhou, Peoples R China
来源
TWENTIETH BIENNIAL IEEE CONFERENCE ON ELECTROMAGNETIC FIELD COMPUTATION (IEEE CEFC 2022) | 2022年
关键词
Hysteresis; Mobile-ionic dielectrics; Physics-based model;
D O I
10.1109/CEFC55061.2022.9940634
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
A physics-based model and the corresponding solution methodology for the mobile-ionic (MI) dielectrics exhibiting Q-V(Charge-Voltage) hysteresis behaviors are proposed based on ion drift-diffusion (IDD) equations coupling with Poisson's equation. The proposed model captures the dynamic distribution of mobile ions' concentrations within dielectric along the external electric field. The accuracy of the proposed model is validated by comparing the computed results with the experimental ones.
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页数:2
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[3]   Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor [J].
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