Merged phototransistor pixel with enhanced near infrared response and flicker noise reduction for biomolecular imaging

被引:12
作者
Chaji, Gholamreza [2 ]
Nathan, Arokia [1 ]
Pankhurst, Quentin [1 ,3 ]
机构
[1] UCL, London Ctr Nanotechnol, London WC1H 0AH, England
[2] Univ Waterloo, Waterloo, ON N2L 3G1, Canada
[3] Royal Inst Great Britain, Davy Faraday Res Lab, London W1S 4BS, England
关键词
amorphous semiconductors; biological techniques; elemental semiconductors; flicker noise; molecular biophysics; phototransistors; semiconductor device noise; semiconductor thin films; silicon; thin film transistors;
D O I
10.1063/1.3002320
中图分类号
O59 [应用物理学];
学科分类号
摘要
A top-illuminated, nonoffset amorphous silicon (a-Si) photo thin-film transistor structure is presented for biomolecular imaging applications. The device yields a high gate-modulated response to near infrared wavelengths, enhanced by trapped assisted absorption in the transistor. In addition, its flicker noise power is reduced by more than a factor of 3 by means of a switched biasing technique. Since the image sensor, readout, and amplification are the same elements, the pixel size can be made relatively small, enabling high resolution imaging capability over large area using standard, low-cost flat-panel technology.
引用
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页数:3
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