DC conduction behavior of Bi3.15Nd0.85Ti3O12 thin films grown by RF-magnetron sputtering

被引：4

作者：

Lee, Hai-Joon ^{[1
]}

Ahn, Chang Won ^{[1
]}

Kang, Sun Hee ^{[1
]}

Do Kim, Chang ^{[1
]}

Kim, Ill-Won ^{[1
]}

Kim, Jin Soo ^{[2
]}

Lee, Jeong Sik ^{[3
]}

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Pusan Natl Univ, Res Ctr Dielect & Adv Matter Phys, Pusan 609735, South Korea

[3] Kyungsung Univ, Dept Phys, Pusan 608736, South Korea

来源：

JOURNAL OF ELECTROCERAMICS | 2008年 / 21卷 / 1-4期

关键词：

Bi3.15Nd0.85Ti3O12; Conductivity; Ferroelectricity; RF-magnetron sputtering;

D O I：

10.1007/s10832-008-9506-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The Bi3.15Nd0.85Ti3O12 (BNT) thin films were deposited on Pt(111)/Ti/SiO2/Si substrates by using RF-magnetron sputtering method and studied the ferroelectric and leakage current charateristics. The polarization - electric field (P-E) hysteresis loops of BNT film was well saturated with the remnant polarization (2P(r)) of 29.8 mu C/cm(2) and a coercive field (2E(c)) of 121 kV/cm. The leakage current density - electric field (J-E) characteristics of the Pt/BNT/Pt capacitor reveals the presence of two conduction region, having Ohmic behavior at low electric field (below 50 kV/cm) and Schottky-emission or Poole-Frenkel emission at high electric field (above 60 kV/cm). The barrier height and trapped level of BNT films are estimated to be 1.11 eV and 0.90 eV, respectively.

引用

页码：851 / 854

页数：4

共 17 条

[1] Layered perovskites with giant spontaneous polarizations for nonvolatile memories
Chon, U
Jang, HM
Kim, MG
Chang, CH
[J]. PHYSICAL REVIEW LETTERS, 2002, 89 (08) : 1 - 087601
[2] ELECTRICAL AND OPTICAL PROPERTIES OF FERROELECTRIC BI4TI3O12 SINGLE CRYSTALS
CUMMINS, SE
CROSS, LE
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) : 2268 - &
[3] Ferroelectric properties and leakage current characteristics of radio-frequency-sputtered SrBi2(V0.1Nb0.9)2O9 thin films
Ezhilvalavan, S
Samper, V
Seng, TW
Xue, JM
Wang, J
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (04) : 2181 - 2185
[4] Low-frequency dielectric relaxation and ac conduction of SrBi2Ta2O9 thin film grown by pulsed laser deposition
Kim, IW
Ahn, CW
Kim, JS
Song, TK
Bae, JS
Choi, BC
Jeong, JH
Lee, JS
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (21) : 4006 - 4008
[5] Electrical conduction behavior of ferroelectric Bi3.25La0.75Ti3O12 thin films prepared by a metalorganic decomposition method
Kim, KT
Kim, CI
[J]. SURFACE & COATINGS TECHNOLOGY, 2004, 177 : 774 - 778
[6] Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition
Kojima, T
Sakai, T
Watanabe, T
Funakubo, H
Saito, K
Osada, M
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (15) : 2746 - 2748
[7] Leakage current conduction of pulsed excimer laser ablated BaBi2Nb2O9 thin films
Laha, A
Krupanidhi, SB
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) : 415 - 420
[8] Dielectric response in pulsed laser ablated (Ba,Sr)TiO3 thin films
Saha, S
Krupanidhi, SB
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (02) : 849 - 854
[9] FERROELECTRIC MEMORIES
SCOTT, JF
DEARAUJO, CAP
[J]. SCIENCE, 1989, 246 (4936) : 1400 - 1405
[10] Sze S. M., 1981, PHYSICS SEMICONDUCTO, P402

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