The Deposition of Elements in the Process of Laser Ablation of Silicon

被引：0

作者：

Wang Shao-peng ^{[1
]}

Feng Guo-ying ^{[1
]}

Duan Tao ^{[2
]}

Han Jing-hua ^{[1
]}

机构：

[1] Sichuan Univ, Coll Elect & Informat Engn, Chengdu 610064, Peoples R China

[2] SW Univ Sci & Technol, Lab Extreme Condit Matter Properties, Mianyang 621010, Peoples R China

来源：

SPECTROSCOPY AND SPECTRAL ANALYSIS | 2013年 / 33卷 / 02期

关键词：

Laser plasma spectroscopy; Element deposition; Silicon; shock wave;

D O I：

10.3964/j.issn.1000-0593(2013)02-0527-04

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Laser processing in the semiconductor industry (especially silicon material) has broad application prospects. The interaction between the laser and silicon is complex, and the present paper mainly studied the silicon morphology in UV laser ablation and the influence law of ambient gas. Studies have shown that the laser plasma ionization effect of silicon in the UV laser ablation has a decisive impact: the removal of the material becomes possible because of generating gasification and ionization, laser plasma shock wave can make phase transition material discharge effectively, and laser plasma spectroscopy ionization effect can make the oxygen elements in the air ionize and deposit effectively.

引用

页码：527 / 530

页数：4

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