First principles study of the electronic properties of MgO under pressure

被引:0
作者
Zhou, Cui [1 ]
Liu, Zhiqiang [2 ]
Kang, Rui [1 ]
Huang, Yue [1 ]
Wang, Qingbo [3 ]
机构
[1] Air Force Early Warning Acad, Dept 3, Wuhan 430019, Peoples R China
[2] Jiujiang Univ, Coll Sci, Jiujiang 332005, Peoples R China
[3] China Univ Geosci, Sch Math & Phys, Wuhan 430074, Peoples R China
来源
PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON MATERIALS, ENVIRONMENTAL AND BIOLOGICAL ENGINEERING | 2015年 / 10卷
关键词
MgO; Pressure; First principles; Electronic properties; OPTICAL-PROPERTIES;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the electronic properties of MgO by first principles (CASTEP program). The calculated band gap of MgO shows MgO is an insulator. Pressure increases the band gap from 4.253 to 7.585 eV. The band above the Fermi level shifts to higher energy, while the band below the Fermi level shifts to lower energy. The shift comes from effect of pressure. The density of states (DOS) have been calculated and the relations between band and DOS have been discussed. The DOS also have shift and the shifts is according to the shifts in band. The electronic properties have also been calculated. We also find the pressure shifts the electronic properties to higher energy. The electronic shift come from the increased band gap. Our result provides a reference for future experiments.
引用
收藏
页码:553 / 556
页数:4
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