A 3V GaAs MESFET monolithic transmitter with cross-coupled common-source, common-gate pair linear mixer for cellular hand-held phones

被引：0

作者：

Kim, MG ^{[1
]}

Mun, JK ^{[1
]}

Lim, JW ^{[1
]}

Kim, CH ^{[1
]}

Lee, CS ^{[1
]}

Lee, J ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Dept Cpd Semicond, Taejon 305600, South Korea

来源：

1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 1999年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A linear mixer with cross-coupled common-source, common-gate pair FET's was proposed and its performances were verified in the GaAs MESFET monolithic transmitter for cellular hand-held phones. The transmitter showed measured conversion gain of 31.2 similar to 31.6dB at LO input power of -5 similar to 0dBm, 1dB compression point of power gain was 9.5dBm at output power, and two-tone (with offset frequency Delta f = 442.5kHz) third-order intermodulation distortion (IMD3) at a total output power of 0dBm was to be 47dBc with a 3V of supply voltage and 43mA of current consumption.

引用

页码：845 / 848

页数：4