Properties of dilute InAsN layers grown by liquid phase epitaxy

被引：18
作者：
Dhar, S. [1 ]
Das, T. D. [1 ]
de la Mare, M. [2 ]
Krier, A. [2 ]
机构：
[1] Univ Calcutta, Dept Elect Sci, Kolkata 700009, W Bengal, India
[2] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 07期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2975166
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N similar to 0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects. (c) 2008 American Institute of Physics.
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页数：3
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