Novel low-temperature growth of SnO2 nanowires and their gas-sensing properties

被引:19
作者
Kumar, R. Rakesh [1 ]
Parmar, Mitesh [1 ,2 ]
Rao, K. Narasimha [1 ]
Rajanna, K. [1 ]
Phani, A. R. [3 ]
机构
[1] Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India
[2] Chonnam Natl Univ, Sch Mech Syst Engn, Kwangju 500757, South Korea
[3] Nanores Adv Mat & Technol, Bangalore 560040, Karnataka, India
关键词
Physical vapor deposition (PVD); Semiconductors; SnO2; nanowires; Transmission electron microscopy (TEM); Sensors; OXIDE; NANOSTRUCTURES;
D O I
10.1016/j.scriptamat.2012.11.002
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A simple thermal evaporation method is presented for the growth of crystalline SnO2 nanowires at a low substrate temperature of 450 degrees C via an gold-assisted vapor-liquid-solid mechanism. The as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy and X-ray diffraction, and were also tested for methanol vapor sensing. Transmission electron microscopy studies revealed the single-crystalline nature of the each nanowire. The fabricated sensor shows good response to methanol vapor at an operating temperature of 450 degrees C. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:408 / 411
页数:4
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