Different As desorption behaviour at step edges on InAs(001) and GaAs(001) surfaces

被引：11

作者：

Behrend, J ^{[1
]}

Wassermeier, M ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] PAUL DRUDE INST FESTKORPERELEKT,D-10117 BERLIN,GERMANY

来源：

SURFACE SCIENCE | 1997年 / 372卷 / 1-3期

关键词：

adsorption kinetics; arsenic; gallium arsenide; growth; indium arsenide; low index single crystal surfaces; reflection high-energy electron diffraction (RHEED; scanning tunnelling microscopy; semiconducting surfaces; surface relaxation and reconstruction; thermal desorption;

D O I：

10.1016/S0039-6028(96)01133-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using scanning tunnelling microscopy (STM) and reflection high-energy electron diffraction (RHEED), we compare the As desorption from (2 x 4) reconstructed InAs(001) and GaAs(001) surfaces prepared by molecular beam epitaxy (MBE) and annealed under ultrahigh vacuum conditions. In both cases the annealing procedure finally leads to a domain structure with group-III (Ga/In) and group-V(As) terminated areas. The STM images reveal a remarkably different As desorption behaviour at step edges. On the GaAs(001) surface, As desorption starts at step edges and gradually continues on the terraces, while on the InAs(001) surface, As first abruptly desorbs from the terraces but remains at the step edges. The residual As decorates the steps on both the upper and the lower terrace.

引用

页码：307 / 311

页数：5

共 12 条

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