IGBT module failure analysis in railway applications

被引：32

作者：

Perpina, X. ^{[1
]}

Serviere, J. F. ^{[2
]}

Jorda, X. ^{[1
]}

Fauquet, A. ^{[1
]}

Hidalgo, S. ^{[1
]}

Urresti-Ibanez, J. ^{[1
]}

Rebollo, J. ^{[1
]}

Mermet-Guyennet, M. ^{[2
]}

机构：

[1] CSIC, Inst Microelect Barcelona, IMB CNM, Barcelona 08193, Spain

[2] Alstom Transport Tarbes, F-65600 Semeac, France

来源：

MICROELECTRONICS RELIABILITY | 2008年 / 48卷 / 8-9期

关键词：

Burn out - Driving strategy - IGBT-chip - Igbt-modules - Latch-ups - Over current - Railway applications - Secondary breakdown;

D O I：

10.1016/j.microrel.2008.06.032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work reports two different characteristic patterns detected in IGBT chips failed in real operation (railway application) by failure analysis procedures. The analysed chips have been recovered from the rheostatic chopper leg and from the three legs which supplies the traction motor. It is observed that depending on the location and characteristics of the detected default (burn-out spot), this failure can be attributed to a latch-up process or a secondary breakdown mechanism. These results are corroborated with tests at limit. obtaining the same result. Consequently, each failure can be linked to overcurrent (latch-up) or overtemperature (secondary breakdown) events, which makes possible to distinguish between problems coming from driving strategies or thermal issues (uneven temperature distribution inside the module or packaging wear-out). (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1427 / 1431

页数：5

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