Comprehensive study of VFB shift in high-k CMOS -: Dipole formation, fermi-level pinning and oxygen vacancy effect

被引：103

作者：

Kamimuta, Y. ^{[1
]}

Iwamoto, K. ^{[1
]}

Nunoshige, Y.

Hirano, A. ^{[1
]}

Mizubayashi, W.

Watanabe, Y. ^{[1
]}

Migita, S.

Ogawa, A. ^{[1
]}

Ota, H.

Nabatame, T. ^{[1
]}

Toriumi, A.

机构：

[1] MIRAI ASET, AIST Tsukuba W 7,16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418941

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have quantitatively investigated effective work function (phi(m,eff)) shift, and experimentally demonstrated that high-k/SiO2 dipole and Si-based gate/high-k contribution are critically important for understanding anomalous V-FB shift. Furthermore, we have also found that annealing of metal/high-k gate stack in the reduction ambient induces another dipole formation at the high-k/SiO2 interface. Finally, by using the Al2O3 and Y2O3 layer as a bottom high-k, the symmetric V-TH CMOS is successfully achieved with a single metal gate electrode.

引用

页码：341 / +

页数：3

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