Enhanced performance thermal diode via thermal boundary resistance at nanoscale

被引:11
作者
Tovar-Padilla, M. [1 ]
Licea-Jimenez, L. [1 ,2 ]
Perez-Garcia, S. A. [1 ,2 ]
Alvarez-Quintana, J. [1 ,2 ]
机构
[1] Ctr Invest Mat Avanzados SC, Unidad Monterrey, Apodaca 66600, Nuevo Leon, Mexico
[2] CIMAV Unidad Monterrey, Genes Grp Embedded Nanomat Energy Scavenging, Apodaca 66600, Nuevo Leon, Mexico
关键词
FRENKEL-KONTOROVA; CONDUCTIVITY; TRANSPORT; HEAT; FILMS;
D O I
10.1063/1.4929586
中图分类号
O59 [应用物理学];
学科分类号
摘要
Hypothetically, a thermal rectifier is a device which leads a greater heat flux in one direction than another one, similarly as the electrical diode works for the electrical flux. Here, a drastic increment in the rectification factor has been obtained in nanoscale layered thermal diodes due to the effect of thermal boundary resistance present on an asymmetrical stack of nanofilms. Measurements show a thermal rectification factor as large as 3.3 under a temperature bias well below 1 K, which is the biggest thermal rectification factor reported at room temperature compared to previously reported thermal diodes so far, According to the direction of the applied heat flux, the observed impact of the thermal boundary resistance on the device is manifested through the presence of an asymmetric temperature rise along the heat transfer axis. Such effect provides an alternative route for the development of high performance thermal diodes. (C) 2015 AIP Publishing LLC.
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页数:3
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