Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates
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作者:
Teherani, James T.
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MIT, Cambridge, MA 02139 USAMIT, Cambridge, MA 02139 USA
Teherani, James T.
[1
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Chern, Winston
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MIT, Cambridge, MA 02139 USAMIT, Cambridge, MA 02139 USA
Chern, Winston
[1
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Antoniadis, Dimitri A.
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MIT, Cambridge, MA 02139 USAMIT, Cambridge, MA 02139 USA
Antoniadis, Dimitri A.
[1
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Hoyt, Judy L.
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MIT, Cambridge, MA 02139 USAMIT, Cambridge, MA 02139 USA
Hoyt, Judy L.
[1
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Ruiz, Liliana
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Univ Texas Brownsville, Brownsville, TX 78520 USAMIT, Cambridge, MA 02139 USA
Ruiz, Liliana
[2
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Poweleit, Christian D.
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Arizona State Univ, Tempe, AZ 85287 USAMIT, Cambridge, MA 02139 USA
Poweleit, Christian D.
[3
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Menendez, Jose
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Arizona State Univ, Tempe, AZ 85287 USAMIT, Cambridge, MA 02139 USA
Menendez, Jose
[3
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机构:
[1] MIT, Cambridge, MA 02139 USA
[2] Univ Texas Brownsville, Brownsville, TX 78520 USA
Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantum-mechanical capacitance-voltage (CV) simulations were fit to experimental CV measurements to extract the band alignment of the strained layers. The valence-band offset of the strained-Si/strained-Ge heterostructure was found to be 770, 760, and 670 meV for 35, 42, and 52% Ge in the relaxed SiGe substrate, respectively. These values are approximately 100 meV larger than the usually recommended band offsets for modeling Si/Ge structures. It is shown that the larger valence-band offsets found here are consistent with an 800-meV average valence-band offset between Si and Ge, which also explains the type-II band alignment observed in strained-Si1-xGex on unstrained-Si heterostructures.