Adaptive Threshold Read Algorithms in Multi-Level Non-Volatile Memories

被引:3
|
作者
Hemo, Evyatar [1 ]
Cassuto, Yuval [1 ]
机构
[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
关键词
Nonvolatile memories (NVM); flash memories; multi-level memories; memory read algorithms; binary search; adaptive reading; two-dimensional memory arrays;
D O I
10.1109/JSAC.2014.140505
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For an array of memory cells that are read by threshold measurements, we ask the question of how to choose the measurements in the read sequence to minimize the number of measurements before the array is fully read. We propose and study analytically and experimentally various adaptive read algorithms, and provide corresponding lower bounds on the average number of measurements. We show that new two-dimensional read algorithms improve over the best one-dimensional ones. We further adapt the read algorithms to the case where the cell levels are not uniformly distributed, as motivated by partially-erased memory arrays.
引用
收藏
页码:847 / 856
页数:10
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