MBE growth and optical properties of ZnO on GaAs(111) substrates

被引：13

作者：

Matsumoto, T ^{[1
]}

Nishimura, K ^{[1
]}

Nabetani, Y ^{[1
]}

Kato, T ^{[1
]}

机构：

[1] Yamanashi Univ, Dept Elect Engn, Kofu, Yamanashi 4008511, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2004年 / 241卷 / 03期

关键词：

D O I：

10.1002/pssb.200304146

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hexagonal ZnO layers were grown by plasma assisted MBE on GaAs(111)B substrates. The substrate was chemically etched and no buffer layer was introduced. The epitaxial orientation relationships was ZnO(0001)HGaAs(111) and ZnO[11-20]//GaAs[01-1]. The layer-substrate interface was investigated by transmission electron microscope (TEM) observation, and 2-3 monolayer thick contrast band was found at the interface. The lattice constant c was smaller than that of bulk ZnO and changed systematically with the layer thickness. Low temperature photoluminescence (PL) spectra was dominated by a donor bund exciton band at 3.360 eV. Another bound exciton band was found around 3.330 eV. The relative intensity of the PL bands changed with growth conditions. PL peak energies became smaller as the lattice constant c became smaller. The lattice strain dependence of the exciton energy was derived. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：591 / 594

页数：4

共 15 条

[1] Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers [J].

Ashrafi, ABMA ;

Ueta, A ;

Avramescu, A ;

Kumano, H ;

Suemune, I ;

Ok, YW ;

Seong, TY .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :550-552

[2] Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates [J].

Chen, YF ;

Hong, SK ;

Ko, HJ ;

Nakajima, M ;

Yao, T ;

Segawa, Y .

APPLIED PHYSICS LETTERS, 2000, 76 (02) :245-247

[3] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].

Chen, YF ;

Bagnall, DM ;

Koh, HJ ;

Park, KT ;

Hiraga, K ;

Zhu, ZQ ;

Yao, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918

[4] Two-dimensional growth of ZnO films on sapphire(0001) with buffer layers [J].

Chen, YF ;

Ko, HJ ;

Hong, SK ;

Yao, T ;

Segawa, Y .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :87-91

[5] Uniaxial locked growth of high-quality epitaxial ZnO films on (11(2)over-bar-0)α-Al2O3 [J].

Fons, P ;

Iwata, K ;

Niki, S ;

Yamada, A ;

Matsubara, K ;

Watanabe, M .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :532-536

[6] Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures:: transmission electron microscopy and triple-axis X-ray diffractometry [J].

Hong, SK ;

Ko, HJ ;

Chen, YF ;

Yao, T .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :537-541

[7] ZnO growth on Si by radical source MBE [J].

Iwata, K ;

Fons, P ;

Niki, S ;

Yamada, A ;

Matsubara, K ;

Nakahara, K ;

Tanabe, T ;

Takasu, H .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :50-54

[8] Luminescence properties of ZnO films grown on GaAs substrates by molecular-beam epitaxy excited by electron-cyclotron resonance oxygen plasma [J].

Kumano, H ;

Ashrafi, AA ;

Ueta, A ;

Avramescu, A ;

Suemune, I .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :280-283

[9] Strain effects on exciton resonance energies of ZnO epitaxial layers [J].

Makino, T ;

Yasuda, T ;

Segawa, Y ;

Ohtomo, A ;

Tamura, K ;

Kawasaki, M ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2001, 79 (09) :1282-1284

[10] BAND-GAPS, CRYSTAL-FIELD SPLITTING, SPIN-ORBIT-COUPLING, AND EXCITON BINDING-ENERGIES IN ZNO UNDER HYDROSTATIC-PRESSURE [J].

MANG, A ;

REIMANN, K ;

RUBENACKE, S .

SOLID STATE COMMUNICATIONS, 1995, 94 (04) :251-254

← 1 2 →