Epitaxial growth of metals with high Ehrlich-Schwoebel barriers and the effect of surfactants

被引：23
|
作者：
Camarero, J
Cros, V
Capitán, MJ
Alvarez, J
Ferrer, S
Niño, MA
Prieto, JE
Gómez, L
Ferrón, J
de Parga, ALV
Gallego, JM
de Miguel, JJ
Miranda, R
机构：
[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
[2] Univ Autonoma Madrid, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
[3] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[4] Inst Fis Rosario, RA-2000 Rosario, Argentina
[5] Univ Nacl Litoral, INTEC, CONICET, RA-3000 Santa Fe, Argentina
[6] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / 05期
关键词：
D O I：
10.1007/s003390051469
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Interlayer diffusion in epitaxial systems with a high energy barrier at the atomic steps - the so-called Ehrlich-Schwoebel (ES) barrier - is strongly reduced. As a consequence of this, a continuous accumulation of roughness takes place during growth. This undesirable effect can be corrected by using surfactant agents. We have studied the influence of the ES barrier on the preparation of epitaxial films on Cu(111), and the surfactant effect of a monolayer of Pb.
引用
收藏
页码：553 / 557
页数：5
相关论文
共 50 条
  • [1] Epitaxial growth of metals with high Ehrlich-Schwoebel barriers and the effect of surfactants
    Camarero, J.
    Cros, V.
    Capitán, M.J.
    Álvarez, J.
    Ferrer, S.
    Niño, M.A.
    Prieto, J.E.
    Gómez, L.
    Ferrón, J.
    Vázquez De Parga, A.L.
    Gallego, J.M.
    De Miguel, J.J.
    Miranda, R.
    Applied Physics A: Materials Science and Processing, 1999, 69 (05): : 553 - 557
  • [2] Epitaxial growth of metals with high Ehrlich–Schwoebel barriers and the effect of surfactants
    J. Camarero
    V. Cros
    M.J. Capitán
    J. Álvarez
    S. Ferrer
    M.A. Niño
    J.E. Prieto
    L. Gómez
    J. Ferrón
    A.L. Vázquez de Parga
    J.M. Gallego
    J.J. de Miguel
    R. Miranda
    Applied Physics A, 1999, 69 : 553 - 557
  • [3] Ehrlich-Schwoebel barrier controlled slope selection in epitaxial growth
    S. Schinzer
    S. Köhler
    G. Reents
    The European Physical Journal B - Condensed Matter and Complex Systems, 2000, 15 : 161 - 168
  • [4] Determination of the Ehrlich-Schwoebel barrier in epitaxial growth of thin films
    Li, Shao-Chun
    Han, Y.
    Jia, Jin-Feng
    Xue, Qi-Kun
    Liu, Feng
    PHYSICAL REVIEW B, 2006, 74 (19)
  • [5] Ehrlich-Schwoebel barrier controlled slope selection in epitaxial growth
    Schinzer, S
    Köhler, S
    Reents, G
    EUROPEAN PHYSICAL JOURNAL B, 2000, 15 (01): : 161 - 168
  • [6] Strongly reduced Ehrlich-Schwoebel barriers at the Cu (111) stepped surface with In and Pb surfactants
    Hao, Jialei
    Zhang, Lixin
    SURFACE SCIENCE, 2018, 667 : 13 - 16
  • [7] Growth law of step bunches induced by the Ehrlich-Schwoebel effect in growth
    Sato, M
    Uwaha, M
    SURFACE SCIENCE, 2001, 493 (1-3) : 494 - 498
  • [8] Ab initio determination of Ehrlich-Schwoebel barriers on Cu{111}
    Xiang, S. K.
    Huang, Hanchen
    APPLIED PHYSICS LETTERS, 2008, 92 (10)
  • [9] Modelling of epitaxial film growth with an Ehrlich-Schwoebel barrier dependent on the step height
    Leal, F. F.
    Ferreira, S. C.
    Ferreira, S. O.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 23 (29)
  • [10] Three-dimensional Ehrlich-Schwoebel barriers of W
    Xu, Z.
    Zhou, L. G.
    Wang, Jian
    Cale, Timothy S.
    Huang, Hanchen
    CMC-COMPUTERS MATERIALS & CONTINUA, 2006, 3 (01): : 43 - 47
12345