Time-resolved pump probe of 1.55 μm InAs/InP quantum dots under high resonant excitation

被引：22

作者：

Cornet, C ^{[1
]}

Labbé, C ^{[1
]}

Folliot, H ^{[1
]}

Caroff, P ^{[1
]}

Levallois, C ^{[1
]}

Dehaese, O ^{[1
]}

Even, J ^{[1
]}

Le Corre, A ^{[1
]}

Loualiche, S ^{[1
]}

机构：

[1] CNRS, UMR FOTON 6082 INSA, Lab Etude Nanostruct & Semicond, F-35043 Rennes, France

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 17期

关键词：

D O I：

10.1063/1.2199454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed time-resolved resonant pump-probe experiment to study the dynamic response of InAs/InP quantum dot transitions. A 72-stacked InAs/InP quantum dot layer sample is grown on (311)B substrate. Photoluminescence at high excitation power reveals ground and excited transitions. Carrier radiative lifetimes and differential transmission are determined under strong excitation powers. The variation of measured carrier radiative lifetimes with increasing excitation powers is attributed to the exciton and biexciton lifetimes difference. The implications of such a difference on differential transmission are discussed, and finally exciton and biexciton lifetimes are measured to be about 1720 and 530 ps, respectively. (c) 2006 American Institute of Physics.

引用

页数：3

共 20 条

[1] Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 μm wavelength region -: art. no. 173109 [J].

Bogaart, EW ;

Nötzel, R ;

Gong, Q ;

Haverkort, JEM ;

Wolter, JH .

APPLIED PHYSICS LETTERS, 2005, 86 (17) :1-3

[2] Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 μm [J].

Caroff, P ;

Bertru, N ;

Le Corre, A ;

Dehaese, O ;

Rohel, T ;

Alghoraibi, I ;

Folliot, H ;

Loualiche, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (33-36) :L1069-L1071

[3] High-gain and low-threshold InAs quantum-dot lasers on InP -: art. no. 243107 [J].

Caroff, P ;

Paranthoen, C ;

Platz, C ;

Dehaese, O ;

Folliot, H ;

Bertru, N ;

Labbé, C ;

Piron, R ;

Homeyer, E ;

Le Corre, A ;

Loualiche, S .

APPLIED PHYSICS LETTERS, 2005, 87 (24) :1-3

[4] Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots -: art. no. 035342 [J].

Cornet, C ;

Platz, C ;

Caroff, P ;

Even, J ;

Labbé, C ;

Folliot, H ;

Le Corre, A ;

Loualiche, S .

PHYSICAL REVIEW B, 2005, 72 (03)

[5] Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 μm laser applications studied by magnetophotoluminescence -: art. no. 233111 [J].

Cornet, C ;

Levallois, C ;

Caroff, P ;

Folliot, H ;

Labbé, C ;

Even, J ;

Le Corre, A ;

Loualiche, S ;

Hayne, M ;

Moshchalkov, VV .

APPLIED PHYSICS LETTERS, 2005, 87 (23) :1-3

[6] Quantitative investigations of optical absorption in InAs/InP (311)B quantum dots emitting at 1.55 μm wavelength [J].

Cornet, C ;

Labbé, C ;

Folliot, H ;

Bertru, N ;

Dehaese, O ;

Even, J ;

Le Corre, A ;

Paranthoen, C ;

Platz, C ;

Loualiche, S .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5685-5687

[7] Carrier-carrier correlations in an optically excited single semiconductor quantum dot [J].

Dekel, E ;

Gershoni, D ;

Ehrenfreund, E ;

Garcia, JM ;

Petroff, PM .

PHYSICAL REVIEW B, 2000, 61 (16) :11009-11020

[8] In-plane anisotropy of quantum elliptic heterostructures studied with symmetry-adapted Mathieu functions: an application to self-organized InAs quantum dots on InP [J].

Even, J ;

Loualiche, S ;

Miska, P ;

Platz, C .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (50) :8737-8752

[9] Efficient acoustic phonon broadening in single self-assembled InAs/GaAs quantum dots -: art. no. 033313 [J].

Kammerer, C ;

Cassabois, G ;

Voisin, C ;

Delalande, C ;

Roussignol, P ;

Lemaître, A ;

Gérard, JM .

PHYSICAL REVIEW B, 2002, 65 (03) :333131-333134

[10] Room-temperature operation of InP-based InAs quantum dot laser [J].

Kim, JS ;

Lee, JH ;

Hong, SU ;

Han, WS ;

Kwack, HS ;

Lee, CW ;

Oh, DK .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (07) :1607-1609

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